- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 51/20 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H10B 51/20
Total number of patents in this class: 209
10-year publication summary
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0
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0
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0
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0
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0
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0
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15
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61
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87
|
47
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| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
103 |
| Samsung Electronics Co., Ltd. | 131630 |
29 |
| SK Hynix Inc. | 11030 |
12 |
| Institute of Microelectronics, Chinese Academy of Sciences | 1290 |
10 |
| Sandisk Technologies LLC | 5684 |
7 |
| Kioxia Corporation | 9847 |
7 |
| Micron Technology, Inc. | 24960 |
6 |
| Sunrise Memory Corporation | 192 |
5 |
| Semiconductor Energy Laboratory Co., Ltd. | 10902 |
3 |
| Yangtze Memory Technologies Co., Ltd. | 1940 |
3 |
| Kepler Computing Inc. | 221 |
3 |
| Lam Research Corporation | 4775 |
2 |
| Korea Advanced Institute of Science and Technology | 3906 |
2 |
| Japan Science and Technology Agency | 1564 |
2 |
| IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
2 |
| International Business Machines Corporation | 60644 |
1 |
| Tokyo Electron Limited | 11599 |
1 |
| Seagate Technology LLC | 4228 |
1 |
| United Microelectronics Corp. | 3921 |
1 |
| Macronix International Co., Ltd. | 2562 |
1 |
| Other owners | 8 |